Veeco MBE
Effusion Cell (k-cell)
Clean, reliable operation up to 2000 deg. C in UHV
Larger source for deposition on 4" substrates and multi-wafer 2" systems
Oxidation-resistant source construction
User replaceable heat shielding and filaments
More than 200 sources in the field
Valved Cracker Cell
Generates either cracked or uncracked S flux
Provides flux modulation and on/off control
Large source capacity
Excellent conservation of source material
Prevents loss of source material during system bakeout
Used by leading II-VI research groups worldwide
UNI-Bulb™ RF Plasma Soure (N2)
All PBN, oxide-free plasma bulb construction
Increased GaN growth rates
Small exit aperture size minimizes ion content in the beam fulx
Excellent plasma stability and reproducibility
Configurations available for growth of GaN, mixed nitrides, and N doping
Veeco MBE
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