AEV-3
was designed to deposit a mono-layer or thin films of a metal or a semiconductor. A
wire type or a rod type sample may be heated with the electron beam, and high
purity evaporation may be performed.
The maximum temperature is high enough to evaporate Fe, Co, Bi, Pt, Ag,
Mo, Ta, W, etc. It is capable of using crucibles as well.
It equips with triple cells, which allow forming of the multiple layers
of trivalent element. Also, 2 sources or 3 sources can be evaporated
simultaneously by adding additional AEV-1P-300 unit(s).
AEV-3 allows the user to monitor the independent flux of 3 sources. With
AEV-1P-300, stable evaporation can be performed. Concerning the
sample exchange, the user can easily replace the samples of the AEV-11 through
the 34 ICF flange without removing the evaporator from the chamber every time.
Specifications
Beam adjustment mechanism φ20 (at Working Distance = 170mm)